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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
READ Operation
Figure 17: Consecutive READ Bursts
T0
T1
T2
T3
T4
T5
T6
CLK
Command
READ
NOP
NOP
NOP
READ
NOP
NOP
X = 1 cycle
Address
Bank,
Col n
Bank,
Col b
DQ
D OUT
n
D OUT
n+1
D OUT
n+2
D OUT
n+3
D OUT
b
CL = 2
T0
T1
T2
T3
T4
T5
T6
T7
CLK
Command
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
X = 2 cycles
Address
Bank,
Col n
Bank,
Col b
DQ
D OUT
n
D OUT
n+1
D OUT
n+2
D OUT
n+3
D OUT
b
CL = 3
Transitioning data
Don’t Care
Note:
1. Each READ command can be issued to any bank. DQM is LOW.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
48
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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